Diaz Group https://validator.w3.org/feed/docs/rss2.html Home Post 4 Post 2 Post 3 Post 5 Post 6 News Publications In Situ Observation of Growth and Reactions Process-Induced Structural and Chemical Changes Interfaces in Quantum and Electronic Materials Research Quantitative and autonomous electron microscopy Members Header 2 Footer 1 Sparking Curiosity and Building Science Identity: A K–12 Outreach Model Using Electron Microscopy for Semiconductor Literacy Compositional dependence of magnetic damping in sputter-deposited CoₓFe₁₋ₓ thin films Outreach 3 Pilar1 Homev2 About Services Contact Header 1 Hello world! Sample Page Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells Overcoming anomalous suppression of m-plane AlGaN growth by molecular-beam epitaxy using indium as a surfactant Mid-infrared intersubband absorption in strain-balanced non-polar (In)AlGaN/InGaN multi-quantum wells Anodic oxidation of epitaxial superconductor-semiconductor hybrids Aggregation vs surface segregation: Antagonism over the magnetic behavior of NiCr nanoparticles Indium surfactant assisted epitaxy of non-polar (10-10) AlGaN/InGaN multiple quantum well heterostructures Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices Preparative Mass Spectrometry Using a Rotating‐Wall Mass Analyzer The dependence of aluminum lattice orientation on semiconductor lattice parameter in planar InAs/Al hybrid heterostructures Solution-Phase Activation and Functionalization of Colloidal WS₂ Nanosheets with Ni Single Atoms Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers Ballistic superconductivity and tunable π–junctions in InSb quantum wells Evolution of indium segregation in metal-polar In₀.₁₇Al₀.₈₃N lattice-matched to GaN grown by plasma-assisted molecular beam epitaxy